Net weight of product:2.6 kilograms

Product Description



5SHX2645L0004 ABB IGCT has the characteristics of high current, high blocking voltage, high switching frequency, high reliability, compact structure, low conduction loss, and low manufacturing cost, high yield, and has good application prospects.



Usually, in device design, if a high blocking voltage value is required, an increase in the thickness of the silicon wafer is required. However, an increase in the thickness of silicon wafers will inevitably lead to an increase in conduction and switching losses. After adopting a buffer layer structure in IGCT, the silicon wafer thickness and standard structure are thinner under the same blocking voltage, greatly reducing conduction and switching losses, thereby improving the efficiency of the device. The use of buffer layers also makes it possible to combine single chip GCTs with diodes.



The most distinctive feature of the 5SHX2645L0004 ABB IGCT driver is its use of integrated gate circuits to achieve "gate commutation" and "hard drive" shutdown processes.



5SHX2645L0004 ABB IGCT Integrated Gate Commutated Thyristors is a new type of power semiconductor switching device developed by medium voltage inverters for use in giant power electronic complete sets (integrated gate commutation thyristor=gate commutation thyristor+gate unit). Proposed by ABB in 1997. IGCT has made significant progress in power, reliability, switching speed, efficiency, cost, weight, and volume of converter devices, bringing a new leap to power electronic complete sets of devices. IGCT integrates GTO chips with anti parallel diodes and gate drive circuits, and then connects them with gate drivers in a low inductance manner on the periphery. It combines the stable turn-off ability of transistors and the advantages of low on state losses of thyristors, and utilizes the performance of thyristors during the conduction phase. The turn-off phase exhibits the characteristics of transistors. IGCT has the characteristics of high current, high blocking voltage, high switching frequency, high reliability, compact structure, low conduction loss, and low manufacturing cost, high yield, and has good application prospects. The IGCT, which has been used in power system power grid devices (100MVA) and medium power industrial drive devices (5MW), has been successfully applied in the field of medium voltage frequency converters for 11 years (until 2009). Due to the high-speed switching ability of IGCT without the need for buffer circuits, the required number of power components is fewer, and the reliability of operation is greatly improved.



IGCT integrates the high-speed switching characteristics of IGBT (insulated gate Bipolar junction transistor) and the high blocking voltage and low conduction loss characteristics of GTO (gate turn off thyristor). Generally, the trigger signal is transmitted to IGCT unit through optical fiber. In the phase module of the edge rectifier unit of ACS6000, each phase module is composed of IGCT, diode, and clamp capacitor, and is powered by an independent gate power supply unit GUSP.