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3BHE039203R0101 ABB IGCT module

Purchase Qty. / Reference FOB Price
1 piece US $
Production Capacity: 1147
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Basic Info

  3BHE039203R0101 ABB IGCT module

  Model:3BHE039203R0101

  Brand:ABB

  Manufacturer:ABB

  Series:Control System

  Product Description

  3BHE039203R0101 ABB is a new type of power semiconductor device with integrated gate commutated thyristors(IGCTs)used in giant power electronic assemblies.IGCT is a new high-power semiconductor switching device based on GTO structure,utilizing integrated gate structure for gate hard drive,using buffer layer structure and anode transparent emitter technology.It has the on state characteristics of thyristors and the switching characteristics of transistors.Because of the buffer structure and shallow emitter technology,the dynamic loss is reduced by about 50%.In addition,this kind of device also integrates a Flyback diode with good dynamic characteristics on a single chip,thus realizing the organic combination of low on voltage drop,high blocking voltage and stable switching characteristics of the transistor in a unique way

  feature

  Adopting integrated packaging,it has high integration and reliability.

  The bottom of the module is equipped with a heat sink,which has a good heat dissipation effect.

  It has good temperature control performance and can work stably for a long time in high-temperature environments.

  3BHE039203R0101 ABB is an IGCT that has made significant progress in power,reliability,switching speed,efficiency,cost,weight,and volume of converter devices,bringing a new leap forward to complete power electronic devices.IGCT integrates GTO chips with anti parallel diodes and gate drive circuits,and then connects them with their gate drivers in a low inductance manner on the periphery.It combines the stable turn-off ability of transistors and the advantages of low on state losses of thyristors,exerting the performance of thyristors during the conduction phase,and presenting transistor characteristics during the turn-off phase.IGCT has the characteristics of high current,high voltage,high switching frequency,high reliability,compact structure,low losses,and low manufacturing cost,high yield,and has good application prospects.GTO using thyristor technology is a commonly used high-power switching device,which has higher performance in cutoff voltage compared to IGBT using transistor technology.However,the widely used standard GTO driving technology causes uneven turn-on and turn-off processes,requiring high cost dv/dt and di/dt absorption circuits and high-power gate driving units,resulting in reduced reliability,high price,and unfavorable series connection.

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