The principle of photolithography is to cover a layer of highly light sensitive photoresist on the surface of the silicon wafer, and then use light (usually Japan harmonic combination SHA20P100CG-C08B200 ultraviolet light, deep ultraviolet light, extreme ultraviolet light) to irradiate the surface of the silicon wafer through the mask, and the light The irradiated photoresist will react. After that, the irradiated/unirradiated photoresistJapan harmonic combination SHA20P100CG-C08B200 is washed away with a specific solvent, and the circuit diagram is transferred from the mask to the silicon wafer. After the photolithography is completed, the part of the silicon wafer that is not protected by the photoresist is etched, and the remaining photoresist is finally washed away, and the construction processJapan harmonic combination SHA20P100CG-C08B200 of the semiconductor device on the surface of the silicon wafer is realized